Bipolar transistor

Details Bipolar transistor Bipolar transistor

2005-03-11

2008-07-08

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S573000, C257S583000, C257S593000, C257SE21372

Reexamination Certificate

active

07397108

ABSTRACT:
A monolithically integrated bipolar transistor has an SOI substrate, a collector region in the SOI substrate, a base layer region on top of and in contact with the collector region, and an emitter layer region on top of and in contact with the base layer region, wherein the collector, base layer, and emitter layer regions are provided with separate contact regions. Further, a region of an insulating material, preferably an oxide or nitride, is provided in the base layer region, in the emitter layer region, or between the base and emitter layer regions, wherein the insulating region extends laterally at a fraction of a width of the base and emitter layer regions to reduce an effective width of the bipolar transistor to thereby eliminate any base push out effects that would otherwise occur.

REFERENCES:
patent: 5003365 (1991-03-01), Havemann et al.
patent: 5087580 (1992-02-01), Eklund
patent: 5587599 (1996-12-01), Mahnkopf et al.
patent: 5629547 (1997-05-01), Chambers et al.
patent: 6979884 (2005-12-01), Ahlgren et al.
patent: 2001/0019872 (2001-09-01), Havemann
patent: 2002/0020852 (2002-02-01), Huang
patent: 2003/0062589 (2003-04-01), Babcock et al.
patent: WO 03/063224 (2003-07-01), None
Cai et al., “Vertical SiGe-Base Bipolar Transistors on CMOS-Compatible SOI Substrate”, Proceedings of the 2003 Bipolar/BiCMOS Circuits and Technology Meeting, pp. 215-218, (4 page).
Ouyang et al., “A Simulation Study on Thin SOI Bipolar Transistor with Fully or Partially Depleted Collector”, Proceedings of the 2002 Bipolar/BiCMOS Circuits and Technology Meeting, pp. 28-31, (4 page).

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