Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2009-04-29
2011-12-13
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000
Reexamination Certificate
active
08077505
ABSTRACT:
Memory devices and methods for operating such devices are described herein. A method as described herein includes applying a reset bias arrangement to a memory cell to change the resistance state from the lower resistance state to the higher resistance state. The reset bias arrangement comprises a first voltage pulse. The method further includes applying a set bias arrangement to the memory cell to change the resistance state from the higher resistance state to the lower resistance state. The set bias arrangement comprises a second voltage pulse, the second voltage pulse having a voltage polarity different from that of the first voltage pulse.
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Chen Yi-Chou
Lin Yuyu
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Nguyen Hien
Phung Anh
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