Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Patent
1994-07-15
1995-11-07
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
257592, 257586, 257559, H01L 2973, H01L 2970, H01L 2940
Patent
active
054650062
ABSTRACT:
This invention pertains to a lateral bipolar transistor comprising an emitter, a base and a collector. The transistor exhibits improved function and overall size reduction, due to the base and emitter structure. An island forms both the base and emitter regions in the transistor structure with the base region being above the collector region, below the emitter region, and surrounded by a dielectric region. The emitter is surrounded by emitter isolation walls, which are formed approximately 0.2 microns above the plane of the dielectric region, such that any manufacturing variances will not cause the emitter isolation walls to contact the dielectric region and pinch-off the base region from the base junction region. This structure also allows the size of the base-emitter junction to be decreased without increasing the parasitic characteristics of the transistor.
REFERENCES:
patent: 4780427 (1988-10-01), Sakai et al.
patent: 5008210 (1991-04-01), Chiang et al.
patent: 5144403 (1992-09-01), Chiang et al.
Baan Cynthia S.
Fahmy Wael M.
Hewlett--Packard Company
Saadat Mahshid D.
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