Bipolar static semiconductor memory device with a high cell hold

Details Bipolar static semiconductor memory device with a high cell hold Bipolar static semiconductor memory device with a high cell hold

1981-03-31

1984-02-14

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

For complementary information

365226, G11C 700

Patent

active

044320760

ABSTRACT:
This invention relates to a bipolar static type semiconductor memory device which reduces the influence of disturbances on the memory cells of non-selected chips and thereby obtains a large memory holding margin for the memory cells.
The semiconductor memory device of the present invention comprises flip-flop type circuit memory cells at the intersecting points of word lines and bit lines. The memory holding margin of the memory cells is increased by clamping the bit line voltage of the non-selected cells to a voltage higher than the bit line voltage of a selected chip being read.

REFERENCES:
patent: 3781828 (1973-12-01), Platt et al.
patent: 4322820 (1982-03-01), Toyoda

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