Bipolar semiconductor device having a conductive recombination l

Details Bipolar semiconductor device having a conductive recombination l Bipolar semiconductor device having a conductive recombination l

1989-02-21

1989-11-14

James, Andrew J.

357 34, 357 59, H01L 29167

Patent

active

048811157

ABSTRACT:
A semiconductor device having a conductive recombination layer. The conductive recombination layer, comprised of doped polycrystalline material, doped polycrystalline material and tungsten silicide, or tungsten silicide, is disposed between two separate semiconductor substrates which are bonded together using a polished surface on the conductive recombination layer as one of the bonding interfaces. The conductive recombination layer recombines minority carriers and thereby increases the switching speed of the device.

REFERENCES:
patent: 3894893 (1975-07-01), Kabaya
patent: 3899793 (1975-08-01), Wakamiya
patent: 4259683 (1981-03-01), Adler

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