Bipolar ram having state dependent write current

Details Bipolar ram having state dependent write current Bipolar ram having state dependent write current

1988-02-11

1989-08-01

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

365155, 365190, G11C 700

Patent

active

048538981

ABSTRACT:
A bipolar RAM having improved read and write cycle times. During a write operation, the state of a selected memory cell is sensed by read/write current controller circuits. A high write current is selected if the data to be written requires a shift of the memory state of the memory cell, and a low write current is selected if the data to be written corresponds to the present memory state of the memory cell. This improves the write cycle time by reducing saturation of the memory cell. If a long write signal is impressed on the RAM, the read/write current controller circuit terminates the high level write current after the memory cell has shifted its memory state. When a memory cell is being selected for a read or write operation, the write current select circuit discharges the bit line attached to the low voltage side of the selected memory cell, improving the read cycle time.

REFERENCES:
patent: 4314359 (1982-02-01), Kato et al.
patent: 4742488 (1988-05-01), Wong

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