Bipolar ram having no write recovery time

Details Bipolar ram having no write recovery time Bipolar ram having no write recovery time

1988-02-11

1989-09-05

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Semiconductive

365190, 365155, G11C 1134, G11C 700

Patent

active

048645400

ABSTRACT:
A bipolar random access memory having no write recovery time. During a data write operation, while the memory state of the memory cell is being shifted, a data bypass circuit sets a sense latch in the sense amplifier to store the new state to which the memory cell is being set. To prevent the sense latch from being shifted by transient write recovery currents charging bit line parasitic capacitances following the data write operation, a read/write transmission circuit isolates the sense amplifier from the bit lines, diverts current from the sense amplifier to a source of high voltage to charge the parasitic capacitances, and then realigns the sense amplifier to the bit lines.

REFERENCES:
patent: 4387445 (1983-06-01), Denis et al.

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