Bipolar RAM cell

Details Bipolar RAM cell Bipolar RAM cell

1985-12-16

1987-10-20

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Flip-flop

365190, G11C 1100

Patent

active

047018828

ABSTRACT:
A memory cell is provided having reduced read and write times, and a large current dynamic range between the standby mode and the read mode. A pair of cross-coupled NPN transistors operating in the inverse mode have their emitters coupled to a word line and their collectors coupled to receive a supply voltage by a first and second load, respectively. First and second NPN sense transistors each have a base coupled to the base of one of the cross-coupled transistors, an emitter coupled to a first and a second bit line, respectively, and a collector coupled to receive the supply voltage.

REFERENCES:
patent: 4125877 (1978-11-01), Reinert
patent: 4373195 (1983-02-01), Toyoda et al.

Affiliated with

Also associated with

Rating

Bipolar RAM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bipolar RAM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar RAM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1616450