Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Patent
1994-11-16
1995-10-03
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
257276, 257586, 257587, 257712, H01L 2972, H01L 2704, H01L 2712
Patent
active
054554489
ABSTRACT:
A high frequency, high power transistor is vertically isolated by providing a thermally conductive, electrically insulating substrate, upon which the transistor components (including collector, base, and emitter) are grown, positioned directly on the heat sink and a planar top surface formed on the transistor by the base metal contact, the emitter metal contact, and the collector metal contact. Vertical isolation improves the thermal management capabilities of the transistor. Moreover, such a vertically isolated transistor is well-adapted for lateral isolation, which solves the capacitance problems inherent in conventional devices.
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Hille Rolf
Jorgenson Lisa K.
Larson Renee M.
Ostrowski David
Ratner Allan
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