Bipolar memory circuit

Static information storage and retrieval – Systems using particular element – Semiconductive

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365174, 365189, 357 24, G11C 1140

Patent

active

042989612

ABSTRACT:
An emitter junction type bipolar memory cell circuit having clamp diodes connected in parallel to collector resistances. The collector resistances are set to produce a potential difference of greater than 0.6 V or so caused by the stationary current. By so doing, it is possible to exclude any mal-function attributable to noises in the writing operation of the memory circuit.

REFERENCES:
patent: 3781828 (1973-12-01), Platt et al.

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