Bipolar junction transistors having insulated gate electrodes

Details Bipolar junction transistors having insulated gate electrodes Bipolar junction transistors having insulated gate electrodes

1996-06-19

1998-02-10

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257593, H01L 2974, H01L 31111, H01L 27082, H01L 27102

Patent

active

057172277

ABSTRACT:
Methods of forming bipolar junction transistors include the step of forming insulated gate electrode means adjacent the base region of the transistor so that the majority carrier conductivity of the base region and the gain (.beta.) of the transistor can be modulated in response to a gate bias. The methods can include the steps of forming an insulated gate electrode containing a conductive gate on a face of a substrate and then forming a base region in the substrate. These steps can then be followed by the steps of patterning the insulated gate electrode to define an opening which exposes a first portion of the base region at the face and then forming an emitter electrode in the opening. The emitter electrode and conductive gate are preferably formed to be in electrical contact so that during operation, the potential of the emitter electrode and conductive gate are maintained at the same level. The emitter electrode is preferably a semiconductor containing first conductivity type dopants which can be diffused into the base region to define an emitter region.

REFERENCES:
patent: 4669177 (1987-06-01), D'Arrigo
patent: 5162966 (1992-11-01), Fujihira

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