Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With emitter region having specified doping concentration...
Reexamination Certificate
2006-08-15
2006-08-15
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With emitter region having specified doping concentration...
C257S578000, C257S586000, C257S587000
Reexamination Certificate
active
07091578
ABSTRACT:
A substrate has a collector region of a first conductivity type, and a base layer of a single crystalline structure and including impurities of a second conductivity type is located over the collector region. An emitter region is defined at least in part by impurities of the first conductivity type contained in the base layer. An emitter electrode of the first conductivity type contacts the emitter region, and at least a portion of the emitter electrode which is in contact with the emitter region has a single crystalline structure.
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Samsung Electronics Co,. Ltd.
Volentine Francos & Whitt PLLC
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