Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Mesa or stacked emitter
Reexamination Certificate
2008-05-06
2008-05-06
Ho, Tu-Tu (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Mesa or stacked emitter
C438S350000, C257S591000, C257S578000, C257S586000, C257S587000, C257SE21379
Reexamination Certificate
active
07368361
ABSTRACT:
A substrate has a collector region of a first conductivity type, and a base layer of a single crystalline structure and including impurities of a second conductivity type is located over the collector region. An emitter region is defined at least in part by impurities of the first conductivity type contained in the base layer. An emitter electrode of the first conductivity type contacts the emitter region, and at least a portion of the emitter electrode which is in contact with the emitter region has a single crystalline structure.
REFERENCES:
patent: 5285088 (1994-02-01), Sato et al.
patent: 5296388 (1994-03-01), Kameyama et al.
patent: 5708281 (1998-01-01), Morishita
patent: 6177717 (2001-01-01), Chantre et al.
patent: 6316818 (2001-11-01), Marty et al.
patent: 6362065 (2002-03-01), Swanson et al.
patent: 6509242 (2003-01-01), Frei et al.
patent: 2002/0149062 (2002-10-01), Nii et al.
patent: 2004/0222496 (2004-11-01), Freeman et al.
patent: 0 621 641 (1994-10-01), None
patent: 306072 (1997-05-01), None
patent: 494557 (2002-07-01), None
Ho Tu-Tu
Samsung Electronics Co,. Ltd.
Volentine & Whitt P.L.L.C.
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