Bipolar junction transistor with improved extrinsic base...

Details Bipolar junction transistor with improved extrinsic base... Bipolar junction transistor with improved extrinsic base...

2006-02-28

2006-02-28

Blum, David (Department: 2813)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C438S365000, C438S368000

Reexamination Certificate

active

07005359

ABSTRACT:
A bipolar transistor and its fabrication are described. The extrinsic base region is formed by growing a second, more heavily doped, epitaxial layer over a first epitaxial layer. The second layer extends under, and is insulated from, an overlying polysilicon emitter pedestal.

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Ida, Minoru et al., “Enhancement of fmax in InP/InGaAs HBT's by Selective MOCVD Growth of Heavily-Doped Extrinsic Base Regions,” IEEE Trans on Elect Devices, vol. 43, No. 11, Nov 1996, pp. 1812-1817.

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