Bipolar junction transistor-based uncooled infrared sensor...

Details Bipolar junction transistor-based uncooled infrared sensor... Bipolar junction transistor-based uncooled infrared sensor...

2008-04-29

2010-12-21

Porta, David P (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

Reexamination Certificate

active

07855366

ABSTRACT:
A BJT (bipolar junction transistor)-based uncooled IR sensor and a manufacturing method thereof are provided. The BJT-based uncooled IR sensor includes: a substrate; at least one BJT which is formed to be floated apart from the substrate; and a heat absorption layer which is formed on an upper surface of the at least one BJT, wherein the BJT changes an output value according heat absorbed through the heat absorption layer. Accordingly, it is possible to provide a BJT-based uncooled IR sensor capable of being implemented through a CMOS compatible process and obtaining more excellent temperature change detection characteristics.

REFERENCES:
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Tomohiro Ishikawa, et al. “Performance of 320×240 Uncooled IRFPA with SOI Diode Detectors” Proc. SPIE, vol. 4130 (2000).

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