Bipolar device having improved capacitance

Details Bipolar device having improved capacitance Bipolar device having improved capacitance

2006-09-13

2010-02-23

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Self-aligned

C257SE21537

Reexamination Certificate

active

07666750

ABSTRACT:
The invention, in one aspect, provides a semiconductor device that comprises a collector located in a semiconductor substrate and an isolation region located under the collector, wherein a peak dopant concentration of the isolation region is separated from a peak dopant concentration of the collector by at least about 0.9 microns. The invention also provides a method for forming this device.

REFERENCES:
patent: 3766446 (1973-10-01), Tarui et al.
patent: 4485552 (1984-12-01), Magdo et al.
patent: 5268312 (1993-12-01), Reuss et al.
patent: 5302534 (1994-04-01), Monk et al.
patent: 5394007 (1995-02-01), Reuss et al.
patent: 5677209 (1997-10-01), Shon et al.
patent: 5889325 (1999-03-01), Uchida et al.
patent: 5899714 (1999-05-01), Farrenkopf et al.
patent: 6144077 (2000-11-01), Maki
patent: 6670658 (2003-12-01), Hattori et al.
patent: 6794730 (2004-09-01), Kim et al.
patent: 6815801 (2004-11-01), Romas et al.
patent: 6943426 (2005-09-01), Williams et al.
patent: 7279399 (2007-10-01), Williams et al.
patent: 7304354 (2007-12-01), Morris
patent: 2001/0026977 (2001-10-01), Hattori et al.
patent: 2002/0084495 (2002-07-01), Kim et al.
patent: 2006/0223257 (2006-10-01), Williams et al.
patent: 2006/0246652 (2006-11-01), Grivna et al.
patent: 2008/0064177 (2008-03-01), Chen et al.
patent: 2008/0251882 (2008-10-01), Koide

Affiliated with

Also associated with

Rating

Bipolar device having improved capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bipolar device having improved capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar device having improved capacitance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4191032