Bipolar device having buried contacts

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257SE29174

Reexamination Certificate

active

08049282

ABSTRACT:
The invention, in one aspect, provides a semiconductor device that includes a collector for a bipolar transistor located within a semiconductor substrate and a buried contact, at least a portion of which is located in the collector to a depth sufficient that adequately contacts the collector.

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