Bipolar device and method of manufacturing the same...

Details Bipolar device and method of manufacturing the same... Bipolar device and method of manufacturing the same...

2006-08-01

2006-08-01

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Mesa or stacked emitter

C438S488000, C438S494000

Reexamination Certificate

active

07084041

ABSTRACT:
A method of manufacturing a bipolar device including pre-treatment using germane gas and a bipolar device manufactured by the same. The method includes forming a single crystalline silicon layer for a base region on a collector region; and forming a polysilicon layer for an emitter region thereon. Here, before the polysilicon layer is formed, the single crystalline silicon layer is pre-treated using germane gas. Thus, an oxide layer is removed from the single crystalline silicon layer, and a germanium layer is formed on the single crystalline silicon layer, thus preventing Si-rearrangement.

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patent: 9-7909 (1997-01-01), None
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patent: 2000-0018992 (2000-04-01), None

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