Bipolar-CMOS (BiCMOS) process for fabricating integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257378, 257588, H01L 2976

Patent

active

060435410

ABSTRACT:
A BiCMOS integrated circuit is fabricated using a minimum number of wafer processing steps and yet offers the IC circuit designer five (5) different transistor types. These types include P-channel and N-channel MOS transistors and three different bipolar transistors whose emitters are all formed by a different process and all are characterized by different current gains and different breakdown voltages. A differential silicon dioxide/silicon nitride masking technique is used in the IC fabrication process wherein both P-type buried layers (PBL) and N-type buried layers (NBL) are formed in a silicon substrate using a single mask set and further wherein P-type wells and N-type wells are formed above these buried layers in an epitaxial layer, also using a single SiO.sub.2 /Si.sub.3 N.sub.4 differential mask set. Two of the bipolar transistor emitters are formed by out diffusion from first and second levels of polysilicon, whereas the emitter of the third bipolar transistor is formed by ion implantation doping.

REFERENCES:
patent: 4345366 (1982-08-01), Brower
patent: 4694562 (1987-09-01), Iwasaki et al.
patent: 4737472 (1988-04-01), Schaber et al.
patent: 4764482 (1988-08-01), Hsu
patent: 4818720 (1989-04-01), Iwasaki
patent: 4847213 (1989-07-01), Pfiester
patent: 4902640 (1990-02-01), Sachitano et al.
patent: 4960726 (1990-10-01), Lechaton et al.
patent: 4987089 (1991-01-01), Roberts
patent: 5045493 (1991-09-01), Kameyama et al.
patent: 5059549 (1991-10-01), Furuhatta
patent: 5132234 (1992-07-01), Kim et al.
patent: 5192992 (1993-03-01), Kim et al.
patent: 5196356 (1993-03-01), Won et al.
patent: 5286991 (1994-02-01), Hui et al.
patent: 5354699 (1994-10-01), Ikeda et al.
patent: 5358884 (1994-10-01), Violette
patent: 5439833 (1995-08-01), Hebert et al.
patent: 5455444 (1995-10-01), Hsue
patent: 5494844 (1996-02-01), Suzuki
patent: 5525530 (1996-06-01), Watabe

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