Bipolar-based SCR for electrostatic discharge protection

Details Bipolar-based SCR for electrostatic discharge protection Bipolar-based SCR for electrostatic discharge protection

2007-12-18

2007-12-18

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S109000, C257SE29187, C438S313000

Reexamination Certificate

active

11065848

ABSTRACT:
A system and method is disclosed for implementing a new bipolar-based silicon controlled rectifier (SCR) circuit for an electrostatic discharge (ESD) protection. The SCR circuit comprises a bipolar device to be formed on a semiconductor substrate. The bipolar device comprises at least an N-well for providing a high resistance and a P+ material to be used as a collector thereof for further providing a high resistance. At least an Nmoat guard ring and a Pmoat guard ring surround the bipolar device, wherein when an ESD event occurs, the high resistance provided by the N-well and the P+ material of the bipolar device increases a turn-on speed.

REFERENCES:
patent: 3453505 (1969-07-01), Offner et al.
patent: 5747834 (1998-05-01), Chen et al.
patent: 6803259 (2004-10-01), Lee
Chen, J.Z., et al., “Bipolar SCR ESD Protection Circuit for High Speed Submicronbipolar/BiCMOS Circuits”, IEDM 95, Dec. 10-13, 1995, p. 337-40.

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