Biploar resistive-switching memory with a single diode per...

Details Biploar resistive-switching memory with a single diode per... Biploar resistive-switching memory with a single diode per...

2009-10-28

2011-12-06

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S175000

Reexamination Certificate

active

08072795

ABSTRACT:
According to various embodiments, a resistive-switching memory element and memory element array that uses a bipolar switching includes a select element comprising only a single diode that is not a Zener diode. The resistive-switching memory elements described herein can switch even when a switching voltage less than the breakdown voltage of the diode is applied in the reverse-bias direction of the diode. The memory elements are able to switch during the very brief period when a transient pulse voltage is visible to the memory element, and therefore can use a single diode per memory cell.

REFERENCES:
patent: 6835949 (2004-12-01), Weiss et al.
patent: 6944052 (2005-09-01), Sumramanian et al.
patent: 6965137 (2005-11-01), Kinney et al.
patent: 7038935 (2006-05-01), Rinerson et al.
patent: 7067862 (2006-06-01), Rinerson et al.
patent: 7157783 (2007-01-01), Marsh
patent: 7372065 (2008-05-01), Kozicki et al.
patent: 7420198 (2008-09-01), Baek et al.
patent: 7495947 (2009-02-01), Scheuerlein et al.
patent: 7535748 (2009-05-01), Shirahama et al.
patent: 7551473 (2009-06-01), Lung et al.
patent: 7558099 (2009-07-01), Morimoto
patent: 7569459 (2009-08-01), Karg et al.
patent: 7615769 (2009-11-01), Kim
patent: 2004/0043578 (2004-03-01), Marsh
patent: 2006/0073657 (2006-04-01), Herner et al.
patent: 2006/0076549 (2006-04-01), Ufert
patent: 2006/0245243 (2006-11-01), Rinerson et al.
patent: 2006/0250836 (2006-11-01), Herner et al.
patent: 2006/0250837 (2006-11-01), Herner et al.
patent: 2006/0255392 (2006-11-01), Cho et al.
patent: 2007/0008773 (2007-01-01), Scheuerlein
patent: 2007/0008785 (2007-01-01), Scheuerlein
patent: 2007/0114509 (2007-05-01), Herner
patent: 2007/0132049 (2007-06-01), Stipe
patent: 2007/0164309 (2007-07-01), Kumar et al.
patent: 2007/0164388 (2007-07-01), Kumar et al.
patent: 2007/0228354 (2007-10-01), Scheuerlein
patent: 2007/0236981 (2007-10-01), Herner
patent: 2007/0252193 (2007-11-01), Cho et al.
patent: 2007/0267667 (2007-11-01), Ufert
patent: 2007/0285967 (2007-12-01), Toda et al.
patent: 2007/0295950 (2007-12-01), Cho et al.
patent: 2008/0001172 (2008-01-01), Karg et al.
patent: 2008/0006907 (2008-01-01), Lee et al.
patent: 2008/0011996 (2008-01-01), Bednorz et al.
patent: 2008/0090337 (2008-04-01), Williams
patent: 2008/0164568 (2008-07-01), Lee et al.
patent: 2008/0203377 (2008-08-01), Choi et al.
patent: 2008/0211036 (2008-09-01), Zhao et al.
patent: 2008/0316796 (2008-12-01), Herner
patent: 2009/0003083 (2009-01-01), Meeks et al.
patent: 2009/0026434 (2009-01-01), Malhotra et al.
patent: 2009/0034320 (2009-02-01), Ueda
patent: 2009/0134431 (2009-05-01), Tabata et al.
patent: 2009/0268508 (2009-10-01), Chen et al.
patent: 2009/0272959 (2009-11-01), Phatak et al.
patent: 2009/0272961 (2009-11-01), Miller et al.
patent: 2009/0272962 (2009-11-01), Kumar et al.
patent: 2344694 (2000-06-01), None
patent: 10-2000-0048092 (2004-03-01), None
patent: 10-2006-0117023 (2006-11-01), None
patent: 10-2007-0062435 (2007-06-01), None
International Search Report, PCT Application PCT/US2009/042424, Dec. 14, 2009.
Chen et al., HfOx Thin Films for Resistive Memory Device by Use of Atomic Layer Deposition, Mater. Res. Soc. Symp. Proc., 2007, vol. 997, Materials Research Society.
Inoue et al., Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogenous/inhomogenous transition of current distribution., Phys. Rev. B 77, 035105 (2008), American Physical Society.
Kim et al., Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films, Applied Physics Letters, Jul. 6, 2007, pp. 012907-1-012907-3, vol. 91, American Institute of Physics.
Lee et al., Low Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide, Japanese Journal of Applied Physics, Apr. 24, 2007, pp. 2175-2179, vol. 46, No. 4B, The Japan Society of Applied Physics.
Lee et al., Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory Applications, Journal of the Electrochemical Society, Dec. 6, 2007, pp. H92-H96, vol. 155 (2), The Electrochemical Society.
Sanchez et al., A mechanism for unipolar resistance switching in oxide nonvolatile memory devices, Dec. 17, 2007, Applied Physics Letters, pp. 252101-1-252101-3, vol. 91, American Institute of Physics.
Yang et al., Memristive switching mechanism for metal/oxide/metal nanodevices, Jun. 15, 2008, Nature Nanotechnology, pp. 429-433, vol. 3, Jul. 2008, Macmillan Publishers Limited.
Smyth, The defect chemistry or metal oxides, Chapters 1-5, 8, 9, and 12, pp. 1-74, 118-161, and 217-237, 2000, Oxford University Press, Inc.
Baek et al., Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses, 2004, IEEE, pp. 23.6.1-23.6.4, IEDM 04-587.
Toriumi et al., Doped HfO2 for Higher-k Dielectrics, 208th ECS Meeting, Abstract #508, 2005, The Electrochemical Society.
Lee et al., HfOx Biploar Resistive Memory with Robust Endurance Using AlCu as Buffer Electrode, Jul. 2009, IEEE Electron Device Letters, vol. 30, No. 7, pp. 703-705, IEEE.
International Search Report, PCT Application PCT/US2009/041582, Dec. 14, 2009.
International Search Report, PCT Application PCT/US2009/041583, Nov. 30, 2009.
Chan et al., Resistive switching effects of HfO2 high-k dielectric, Sep. 25, 2008, Microelectronic Engineering, pp. 2420-2424, vol. 85, Elsevier B.V.
Chen et al., Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity, 2009, IEEE, pp. IEDM09-105-IEDM09-108.
U.S. Appl. No. 12/608,934, filed Oct. 29, 2009.
U.S. Appl. No. 12/610,236, filed Oct. 30, 2009.
U.S. Appl. No. 12/705,474, filed Feb. 12, 2010.

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