BiMOS structure having a protective diode

Details BiMOS structure having a protective diode BiMOS structure having a protective diode

1992-08-21

1993-05-18

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257378, 257656, H01L 2362, H01L 2976, H01L 31075

Patent

active

052123987

ABSTRACT:
In an integrated circuit device including a bipolar transistor, MOSFET, and protective diode for the MOSFET, all formed over a semiconductor substrate, the protective diode for holding an adequate electrostatic breakdown voltage for a gate oxide layer of the MOSFET is provided by forming a second conductivity type buried area continuous with, and in contact with, a second conductivity type region at a boundary between the first conductivity type semiconductor substrate and a first conductivity type second semiconductor layer. By doing so, a substantive junction depth Xj is made deeper as a whole with respect to the second conductivity type region. It is, therefore, possible to obtain a protective diode of adequate electrostatic breakdown-voltage characteristic which does not adversely affect the operation of the MOSFET even if a relatively thin semiconductor layer is employed. The resultant integrated circuit device equipped with the aforementioned protective diode can reveal an improved high frequency characteristic.

REFERENCES:
patent: 3806773 (1974-04-01), Watanabe
patent: 4451839 (1984-05-01), Nelson
patent: 4601760 (1986-07-01), Hemmah et al.
patent: 4652895 (1987-03-01), Roskas
patent: 4757276 (1988-07-01), Ishii et al.
patent: 4928157 (1990-05-01), Matsunaga et al.
patent: 4935800 (1990-06-01), Taguchi

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