Bimos semiconductor integrated circuit device including high spe

Details Bimos semiconductor integrated circuit device including high spe Bimos semiconductor integrated circuit device including high spe

1995-06-05

1997-09-30

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257655, H01L 2976, H01L 29167

Patent

active

056728972

ABSTRACT:
An improved arrangement is provided for forming a bipolar transistor on a substrate with CMOS elements. All of the transistors (i.e., the bipolar, P-MOS and N-MOS) are formed in regions having gradually decreasing impurity concentrations from the surface toward the substrate. In addition, a buried layer is provided under each of the regions of decreasing impurity concentration in which the transistors are formed. These buried layers have a significantly higher impurity concentration than the portion of the region of decreasing impurity concentration which they are respectively adjacent to. Using this arrangement, punch-through is prevented and excellent electrical operating characteristics are provided for both the bipolar transistors and the CMOS elements.

REFERENCES:
patent: 4980744 (1990-12-01), Watanabe et al.

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