Bimodal ESD protection for DRAM power supplies and SCRs for DRAM

Details Bimodal ESD protection for DRAM power supplies and SCRs for DRAM Bimodal ESD protection for DRAM power supplies and SCRs for DRAM

1996-10-31

1998-09-29

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257361, 257362, 257546, H01L 2362

Patent

active

058148655

ABSTRACT:
An embodiment of the instant invention is an ESD protection circuit (100) for protecting a circuit from negative stress, the ESD protection circuit comprising: a first terminal (102); a second terminal (104), the circuit to be protected connected between the first and the second terminals; a substrate (202) of a first conductivity type; a first doped region (206) of a second conductivity type opposite the first conductivity type and formed in the substrate, the first doped region forming the source of a transistor; a second doped region (208) of the second conductivity and formed in the substrate spaced from the first doped region by a channel region, the second doped region forming the drain of the transistor; a first diode region (210) of the first conductivity type and formed in the substrate, the first diode region being spaced a minimum distance from the second doped region and wherein the first diode region forms the anode of a diode (108) and the second doped region forms the cathode of the diode; and wherein the diode and the transistor (106) are connected between the first terminal and the second terminal, the diode protects the transistor and the circuit during the negative stress.

REFERENCES:
patent: 5060037 (1991-10-01), Rountree
patent: 5343053 (1994-08-01), Avery
patent: 5572394 (1996-11-01), Ker et al.
patent: 5602404 (1997-02-01), Chen et al.
patent: 5623156 (1997-04-01), Watt

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