Bimetal layer manufacturing method

Details Bimetal layer manufacturing method Bimetal layer manufacturing method

2006-02-28

2006-02-28

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S381000, C438S624000, C438S957000

Reexamination Certificate

active

07005377

ABSTRACT:
A bimetal layer manufacturing method includes the procedure of: forming a first dielectric layer on the surface of a semiconductor substrate which has a first metal layer (conductive layer) of a selected pattern formed thereon; forming a SOG layer on the surface of the first dielectric layer; forming a second dielectric layer; forming required via holes on the foregoing layers until reaching the first metal layer; forming a linear layer from a dielectrics material through PECVD; removing unnecessary linear layer from selected locations through an anisotropic plasma etching process; finally forming a second metal layer on a selected surface of the linear layer where MIM capacitors to be formed, and forming connection plugs in the via openings without generating via hole poison.

REFERENCES:
patent: 6300682 (2001-10-01), Chen
patent: 6384442 (2002-05-01), Chen
patent: 6597032 (2003-07-01), Lee
patent: 6730573 (2004-05-01), Ng et al.

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