Bilevel resist

Details Bilevel resist Bilevel resist

1984-05-24

1985-06-04

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156652, 156655, 1566591, 156904, 204192E, 427 41, 427 431, 430312, 430313, B44C 122, C03C 1500, C03C 2506, B29C 1708

Patent

active

045212740

ABSTRACT:
Excellent resolution in the lithographic fabrication of electronic devices is achieved with a specific bilevel resist. This bilevel resist includes an underlying layer formed with a conventional material such as a novolac resist baked at 200.degree. C. for 30 minutes and an overlying layer including a silicon containing material such as that formed by the condensation of formaldehyde with a silicon-substituted phenol. This bilevel resist has the attributes of a trilevel resist and requires significantly less processing.

REFERENCES:
patent: 4426247 (1984-01-01), Tamamura et al.
patent: 4481049 (1984-11-01), Reichmanis et al.

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