Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1993-11-22
1994-06-07
Powell, William
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
1566591, 156904, 430296, 430313, 430323, G03C 1492, G03C 1494
Patent
active
053188772
ABSTRACT:
A resist pattern on a substrate is formed using an imageable resist layer on the surface of a substrate. The imageable resist layer comprises a silicon-incorporated polystyrene-diene block copolymer having a silicon weight percent of at least about 5 percent. The imageable layer is prepared by reacting a polystyrene-diene block copolymer with a silicon-containing compound in the presence of a platinum catalyst. In a preferred embodiment, the poly(styrene)-diene block copolymers are hydrosilylated by hydrosiloxanes using a platinum-divinyl tetramethyl disiloxane catalyst.
REFERENCES:
patent: 4061799 (1977-12-01), Brewer
patent: 4481049 (1984-11-01), Reichmanis et al.
patent: 4481279 (1984-11-01), Naito et al.
patent: 4504629 (1985-03-01), Lien et al.
patent: 4892617 (1990-01-01), Bates et al.
patent: 5275920 (1994-04-01), Sezi et al.
K. Ito et al., Chem. Abstr. 90:138863y (1978).
Loctite Corp. Japanese Patent 62,179,506, Chem. Abstr. 108:205255g (1987).
L. Khananashvili et al., Chem. Abstr. 104:150506z (1985).
X. Guo et al., Macromolecules 23,5047 (1990).
X. Guo et al., Macromolecules 25,883 (1992).
M. Jurek, Lithographic Evaluation of Phenolic Resin-Siloxane Block Co-Polymers (1989).
M. Bowden et al., Macromol, Symp. 53, 123-137 (1992).
Gabor Allen H.
Lehner Eric A.
Mao Guoping
Ober Christopher K.
Schneggenburger Lizabeth A.
Cornell Research Foundation Inc.
Powell William
LandOfFree
Bilayer resist and process for preparing same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bilayer resist and process for preparing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bilayer resist and process for preparing same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-792113