Bidirectional trench gated power MOSFET with submerged body bus

Details Bidirectional trench gated power MOSFET with submerged body bus Bidirectional trench gated power MOSFET with submerged body bus

1997-06-30

1999-03-02

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257263, 257264, 257265, 257266, H01L 2976

Patent

active

058775382

ABSTRACT:
A trench power MOSFET includes a body region which is not shorted to the source region and which is entirely covered by the source region within each cell of the MOSFET. The body region within each MOSFET cell is brought to the surface of the substrate (or epitaxial layer overlying the substrate) in an area outside of the MOSFET cell, and is connected to a body contact bus which is electrically insulated from the source bus. A deep diffusion of the same conductivity type as the body region may be formed adjacent the trench gate but outside of a MOSFET cell to protect the gate oxide from excessive field potentials at the corners of the gate. The deep diffusion is also connected to the body contact bus, which may include a metal layer, a submerged region of the second conductivity, or both.

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