Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
Reexamination Certificate
2005-08-09
2005-08-09
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Bidirectional rectifier with control electrode
C257S107000
Reexamination Certificate
active
06927427
ABSTRACT:
A monolithic bidirectional switch formed in an N-type semiconductor substrate, including, in a first area, a first vertical thyristor adjacent to a second vertical thyristor; a triggering area arranged on the front surface side, apart from the first area, including a P-type well in which is formed an N-type region; a first metallization covering the rear surface; a second metallization on the front surface layers of the first and second thyristors; a third gate metallization on said well; on the rear surface side, an additional P-type region and an insulating layer interposed between this additional region and the first metallization, the additional region extending under the triggering area; and a fourth metallization on the region.
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Jorgenson Lisa K.
Morris James H.
STMicroelectronics S.A.
Trinh Hoa B.
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