Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-24
2007-07-24
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S321000, C257S324000, C257S326000, C438S201000, C438S257000, C438S258000
Reexamination Certificate
active
11134557
ABSTRACT:
A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type and a second region of the second conductivity type in the substrate, spaced apart from the first region, thereby defining a channel region therebetween. A plurality of floating gates are spaced apart from one another and each is insulated from the channel region. A plurality of control gates are spaced apart from one another, with each control gate insulated from the channel region. Each of the control gate is between a pair of floating gates and is capacitively coupled to the pair of floating gates. A plurality of select gates are spaced apart from one another, with each select gate insulated from the channel region. Each select gate is between a pair of floating gates.
REFERENCES:
patent: 4099196 (1978-07-01), Simko
patent: 4964143 (1990-10-01), Haskell
patent: 5029130 (1991-07-01), Yeh
patent: 5364806 (1994-11-01), Ma et al.
patent: 5801412 (1998-09-01), Tobita
patent: 6151248 (2000-11-01), Harari et al.
patent: 6268622 (2001-07-01), Shone et al.
patent: 6337245 (2002-01-01), Choi
patent: 6512262 (2003-01-01), Watanabe
patent: 6825084 (2004-11-01), Ogura et al.
patent: 6911690 (2005-06-01), Hsu et al.
patent: 2001/0020718 (2001-09-01), Takahashi et al.
patent: 2003/0057474 (2003-03-01), Ma et al.
patent: 2004/0161881 (2004-08-01), Shin et al.
patent: 2006/0017085 (2006-01-01), Tuntasood et al.
Chen Changyuan
Cooksey John W.
Gao Feng
Lee Dana
Lin Ya-Fen
Chiu Tsz
DLA Piper (US) LLP
Silicon Storage Technology, Inc.
Wilczewski Mary
LandOfFree
Bidirectional split gate NAND flash memory structure and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bidirectional split gate NAND flash memory structure and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bidirectional split gate NAND flash memory structure and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3800172