Bidirectional split gate NAND flash memory structure and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S316000, C257S321000, C257S324000, C257S326000, C438S201000, C438S257000, C438S258000

Reexamination Certificate

active

11134557

ABSTRACT:
A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type and a second region of the second conductivity type in the substrate, spaced apart from the first region, thereby defining a channel region therebetween. A plurality of floating gates are spaced apart from one another and each is insulated from the channel region. A plurality of control gates are spaced apart from one another, with each control gate insulated from the channel region. Each of the control gate is between a pair of floating gates and is capacitively coupled to the pair of floating gates. A plurality of select gates are spaced apart from one another, with each select gate insulated from the channel region. Each select gate is between a pair of floating gates.

REFERENCES:
patent: 4099196 (1978-07-01), Simko
patent: 4964143 (1990-10-01), Haskell
patent: 5029130 (1991-07-01), Yeh
patent: 5364806 (1994-11-01), Ma et al.
patent: 5801412 (1998-09-01), Tobita
patent: 6151248 (2000-11-01), Harari et al.
patent: 6268622 (2001-07-01), Shone et al.
patent: 6337245 (2002-01-01), Choi
patent: 6512262 (2003-01-01), Watanabe
patent: 6825084 (2004-11-01), Ogura et al.
patent: 6911690 (2005-06-01), Hsu et al.
patent: 2001/0020718 (2001-09-01), Takahashi et al.
patent: 2003/0057474 (2003-03-01), Ma et al.
patent: 2004/0161881 (2004-08-01), Shin et al.
patent: 2006/0017085 (2006-01-01), Tuntasood et al.

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