Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-25
2008-12-30
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S316000, C257S320000, C257S321000, C257SE21680
Reexamination Certificate
active
07470949
ABSTRACT:
A nonvolatile memory cell has a charge trapping layer for the storage of charges thereon. The cell is a bidirectional cell in a substrate of a first conductivity. The cell has two spaced apart trenches. Within each trench, at the bottom thereof is a region of a second conductivity. A channel extends from one of the region at the bottom of one of the trenches along the side wall of that trench to the top planar surface of the substrate, and along the sidewall of the adjacent trench to the region at the bottom of the adjacent trench. The trapping layer is along the sidewall of each of the two trenches. A control gate is in each of the trenches capacitively coupled to the trapping layer along the sidewall and to the region at the bottom of the trench. Each of the trenches can stored a plurality of bits.
REFERENCES:
patent: 6861315 (2005-03-01), Chen
patent: 6936883 (2005-08-01), Chen
patent: 6940125 (2005-09-01), Kianian
Choi, et al., “High Density Silicon Nanocrystal Embedded in SiN Prepared by Low Energy (<500eV) SiH4Plasma Immersion Ion Implantation for Non-volatile Memory Applications,” IEEE, 2005, 4 pages.
Chen Bomy
Frayer Jack Edward
Tsui Felix (Ying-Kit)
Widjaja Yuniarto
DLA Piper (LLP) US
Pert Evan
Silicon Storage Technology, Inc.
Tran Tan N
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