Bidirectional horizontal charge transfer device and method

Details Bidirectional horizontal charge transfer device and method Bidirectional horizontal charge transfer device and method

1996-07-30

1998-06-30

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Charge transfer device

438146, H01L 21339

Patent

active

057733244

ABSTRACT:
A bidirectional horizontal charge transfer device and method includes a charge transfer area formed within a substrate, a plurality of first, second, third and fourth poly gates formed over the charge transfer area, an insulating layer formed between the first, second, third and fourth poly gates, a first clock signal applied to the first and second poly gates, a second clock signal applied to the third and fourth poly gates, and a biasing circuit for selectively applying a bias signal to the first and second clock signals so as to selectively change a charge transfer direction.

REFERENCES:
patent: 4087832 (1978-05-01), Jambotkar
patent: 5172399 (1992-12-01), Hirose
patent: 5173757 (1992-12-01), Miwanda
patent: 5240873 (1993-08-01), Shinji
patent: 5314836 (1994-05-01), Lavine
patent: 5578511 (1996-11-01), Son
patent: 5627096 (1997-05-01), Keigo
patent: 5637891 (1997-06-01), Lee

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