Bidirectional electrical overstress protection circuit for bipol

Details Bidirectional electrical overstress protection circuit for bipol Bidirectional electrical overstress protection circuit for bipol

1995-07-13

1997-02-11

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257358, 257361, H01L 2362

Patent

active

056024096

ABSTRACT:
An electrical overstress (EOS) protection circuit includes a pair of contra-directed diode-connected bipolar EOS transistors connected between two integrated circuit (IC) terminals. One of the EOS transistors has a reverse-biased junction and the other has a forward-biased junction when a voltage is applied across the IC terminals. A pair of parasitic bipolar transistors are formed in series to provide a current path between the EOS transistors. When the voltage difference between the IC terminals exceeds the breakdown voltage of the EOS transistor with a reverse-biased junction as during an electrostatic discharge event, the parasitic transistors activate the EOS transistor with a reverse-biased junction to divert ESD current from the IC.

REFERENCES:
patent: 4760433 (1988-07-01), Young et al.
patent: 4939616 (1990-07-01), Rountree
patent: 5012317 (1991-04-01), Rountre
patent: 5140401 (1992-08-01), Ker et al.
patent: 5212618 (1993-05-01), O'Neill et al.
patent: 5392185 (1995-02-01), Haas, Jr. et al.
patent: 5455436 (1995-10-01), Cheng
LT1137A, "Advanced Low Power 5V RS232 Transceiver with Small Capacitors", Linear Technology Corporation, Interface Product Handbook 1993, pp. 1-13 to 1-19.
LT1237, "5V RS232 Transceiver with Advanced Power Management and One Receiver Active in Shut-Down", Linear Technology Corporation, Interface Product Handbook 1993, pp. 1-30 to 1-36.

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