Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-11-30
1995-05-30
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257392, 257655, H01L 2978, H01L
Patent
active
054204518
ABSTRACT:
A bidirectional current blocking lateral power MOSFET including a source and a drain which are not shorted to a substrate, and voltages that are applied to the source and drain are both higher than the voltage at which the body is maintained (for an N-channel MOSFET) or lower than the voltage at which the body is maintained (for a P-channel MOSFET). The on-resistance of the MOSFET is improved by decreasing the conductance of the epi region and disposing a thin threshold adjust layer on the surface of the substrate between the source and drain regions. An optional second punchthrough preventing implant is disposed on the substrate surface.
REFERENCES:
patent: 4315781 (1982-02-01), Henderson
patent: 5362981 (1994-11-01), Sato et al.
Chen Jun W.
Jew Kevin
Williams Richard K.
Ngo Ngan V.
Siliconix incorporated
Steuber David E.
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