Static information storage and retrieval – Read/write circuit – For complementary information
Patent
1989-02-14
1990-07-03
Hecker, Stuart N.
Static information storage and retrieval
Read/write circuit
For complementary information
365207, 365204, 307530, G11C 700, G11C 1140
Patent
active
049396935
ABSTRACT:
A BiCMOS static random access memory is disclosed, where the sense amplifiers each consist of a pair of bipolar transistors connected in emitter-coupled fashion. A pair of current sources, such as MOS transistors, are connected between the bases of said bipolar transistors and ground, to provide additional pull-down current for the bit lines. This additional pull-down current reduces the differential bit line voltage, improving the speed at which subsequent reads may be performed. Another embodiment uses a dummy column as a detection circuit, with the output of the dummy column controlling an operational amplifier, so that the operational amplifier may bias the current source pair to control the pull-down current, and thus the differential bit line voltage. Another embodiment controls the current source pair responsive to the row address, so that the effects of series bit line resistance may be taken into account in establishing the desired pull-down current.
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Anderson Rodney M.
Bowler Alyssa H.
Hecker Stuart N.
Sharp Melvin
Texas Instruments Incorporated
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