BiCMOS SOI structure having vertical BJT and method of fabricati

Details BiCMOS SOI structure having vertical BJT and method of fabricati BiCMOS SOI structure having vertical BJT and method of fabricati

1993-06-14

1995-07-04

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257378, 257 51, 257 67, H01L 2702

Patent

active

054303184

ABSTRACT:
A BiCMOS structure in which the bipolar transistor is preferably arranged vertically and the MOS transistors are formed on insulator. SIMOX techniques may be used to form a starting substrate.

REFERENCES:
patent: 4016596 (1977-04-01), Magdo et al.
patent: 4980303 (1990-12-01), Yamauchi
patent: 5079607 (1992-01-01), Sakurai
patent: 5102809 (1992-04-01), Eklund et al.
patent: 5212397 (1993-05-01), See et al.
patent: 5331193 (1994-07-01), Mukogawa
patent: 5355009 (1994-10-01), Honda et al.

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