BiCMOS semiconductor device having SiGe heterojunction and Si ho

Details BiCMOS semiconductor device having SiGe heterojunction and Si ho BiCMOS semiconductor device having SiGe heterojunction and Si ho

1994-10-07

1996-06-04

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257197, 257378, 257553, 257555, 257616, H01L 2994, H01L 31072, H01L 310328

Patent

active

055236065

ABSTRACT:
A BiCMOS semiconductor device includes a pair of p-channel and n-channel MOS field effect transistors, a hetero-junction bipolar transistor including an epitaxial base layer made of a first compound semiconductor, and a homo-junction bipolar transistor including a base layer made of a second semiconductor. The hetero-junction bipolar transistor is operated in a low collector current region less than a critical collector current value at which the hetero-junction bipolar transistor has the maximum value of a cutoff frequency thereof. The homo-junction bipolar transistor is operated in a high collector current region more than a critical collector current value at which the homo-junction bipolar transistor has the maximum value of a cutoff frequency thereof.

REFERENCES:
patent: 5268588 (1993-12-01), Marum
patent: 5323031 (1994-06-01), Shoji et al.
patent: 5399894 (1995-03-01), Maeda et al.
Imai, K., et al.; "A Cyro -BiCMOS Technology with Si/SiGe Heterojunction Bipolar Transistors", IEEE 1990 Bipolar Circuits and Technology Meeting 4.4, pp. 90-93.
By E. Prinz et al., "The effect of Base-Emitter Spacers and Strain-Dependent Densities of States in Si/SI.sub.1-x Ge.sub.x /Si Heterojunction Bipolar Transistors", IEEE, 1989, pp. 639-642.
By K. Imai et al., "A Cryo-BiCMOS Technology with Si/SiGe Heterojunction Bipolar Transistors", IEEE 1990 Bipolar Circuits and Technology Meeting, pp. 90-93.

Affiliated with

Also associated with

Rating

BiCMOS semiconductor device having SiGe heterojunction and Si ho does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with BiCMOS semiconductor device having SiGe heterojunction and Si ho, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and BiCMOS semiconductor device having SiGe heterojunction and Si ho will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-385827