Bicmos read/write control and sensing circuit

Details Bicmos read/write control and sensing circuit Bicmos read/write control and sensing circuit

1989-05-03

1990-03-20

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Including signal clamping

365208, G11C 700

Patent

active

049107119

ABSTRACT:
A bipolar/CMOS read/write control and sensing circuit is provided for use with MOS memory cells in which data can be written into and sensed in the memory cells at high speeds. The MOS memory cell is coupled with a word line and between first and second bit lines at corresponding first and second sense nodes. The control and sensing circuit includes a bit-line clamping network which is responsive to an output control signal for clamping the first and second bit lines during a read operation so as to present a low impedance thereby decreasing the read time and for unclamping of the first and second bit lines during a write operation so as to present a high impedance which reduces the write time.

REFERENCES:
patent: 4785427 (1988-11-01), Young

Affiliated with

Also associated with

Rating

Bicmos read/write control and sensing circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bicmos read/write control and sensing circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bicmos read/write control and sensing circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-797521