BICMOS process for counter doped collector

Details BICMOS process for counter doped collector BICMOS process for counter doped collector

1995-11-16

1997-05-13

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257491, 257565, 257583, 257592, H01L 2976, H01L 2358, H01L 27082, H01L 27102

Patent

active

056295472

ABSTRACT:
A BiCMOS process where a base region is formed in a relatively highly doped n-type substrate region. Boron is implanted at two different energy levels to form the base region and a counter doped n region near the base collector junction to prevent impact ionization.

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