BiCMOS memory cell with current access

Static information storage and retrieval – Systems using particular element – Semiconductive

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365154, 365156, 36518911, 365190, 365207, G11C 700, G11C 1140

Patent

active

054327369

ABSTRACT:
A current mode access BiCMOS memory cell is disclosed. The memory cell includes a CMOS storage cell for storing first and second CMOS voltage potentials, VDD and VSS, corresponding to first and second logic levels. The storage cell includes two CMOS inverters coupled between VDD and VSS. The storage cell is coupled to a conversion circuit. The conversion circuit is coupled between third and fourth ECL working potentials. It functions to convert the first and second CMOS voltage potentials into the third and fourth working potentials. The third and fourth voltage potentials are coupled to the bases of two bipolar signal converters. The emitters of the bipolar signal converters are coupled to a selectable current source and the collectors of the bipolar signal converters are coupled to complementary bit lines. The selectable current source is responsive to a read word signal. A differential current signal representing the data stored in the memory cell is established in the complementary bit lines when the current source is selected and current is allowed to flow through one of the bipolar signal converters. The third and fourth ECL voltage potentials are chosen such that they ensure that the bipolar signal converters are not driven into saturation. In this way, read times are optimized. In addition, read times are reduced since peak-to-peak voltage of the current mode differential signal established across the complementary bit lines are reduced.

REFERENCES:
patent: 4933899 (1990-06-01), Gibbs
patent: 5239501 (1993-08-01), Matsui et al.
patent: 5283757 (1994-02-01), Lee et al.
Wingard et al., "Circuit Techniques for Large CSEA SRAM's", IEEE Journal of Solid-State Circuits, vol. 27, No. 6 (Jun. 1992).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

BiCMOS memory cell with current access does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with BiCMOS memory cell with current access, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and BiCMOS memory cell with current access will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-508624

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.