Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-04-01
2000-03-14
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
H01L 2976
Patent
active
060376376
ABSTRACT:
In a semiconductor integrated circuit device wherein a BiCMOS logical gate circuit and a CMOS logical gate circuit are used in combination, a lower power consumption than that of CMOS and a higher integration density than that of CMOS are realized without sacrificing the operating speed. The BiCMOS semiconductor integrated circuit device of the present invention is realized by logical function macros using the output portion, of logical function realized by a CMOS gate constituted by an MOS transistor having a gate width determined by the minimum value in the design criteria, as a BiCMOS buffer having a very small input capacity. In the BiCMOS buffer, the gate width of the MOS transistor, wherein a gate is connected to the input terminal, is set at a small value by incorporation of a base potential clamp circuit or the like.
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"Analysis and Design of Digital Integrated Circuits" Hodges and Jackson, p. 89, 1988.
Japanese Office Action dated Aug. 19, 1997 with English language translation of Japanese Examiner's comments.
Japanese Office Action dated Mar. 16, 1998 with English language translation of Japanese Examiner's comments.
Abbas El Gamal, et al., "BiNMOS: A Basic Cell for BiCMOS Sea-of-Gates," Processing of IEEE 1989 Custom Integrated Circuits Conference, pp. 8.3.1-8.3.4, 1989.
Chaudhuri Olik
NEC Corporation
Wille Douglas A.
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