Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-01-15
1993-02-23
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257401, 257506, H01L 2978, H01L 2986, H01L 2701
Patent
active
051893100
ABSTRACT:
A novel BICMOS output buffer is taught including circuit means for firstly discharging the bases of the bipolar pull up and bipolar pull down transistors, and secondly to connect the base of an output transistor to its emitter when that output transistor is conducting, thereby insuring maximum voltage swing of the output voltage. The circuit means comprises an MOS transistor for discharging the base of an output transistor, and a depletion mode MOS transistor for connecting the base of an output transistor to its emitter. By utilizing MOS and depletion mode transistors, a significant area advantage is achieved, particularly when the MOS and depletion mode transistors are merged.
Cham Kit M.
Gleason, Jr. Robert E.
Hewlett--Packard Company
James Andrew J.
Monin D.
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