Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21422, C257S315000
Reexamination Certificate
active
07989875
ABSTRACT:
A BiCMOS substrate includes a bipolar area having a buried carrier layer, and a deep trench isolation (DTI) trench extending into the buried carrier layer to form a surface well implant above a buried well implant within the DTI trench, the buried well implant being the buried carrier layer portion within the DTI trench. A floating gate is disposed on the carrier well. Optionally, a high voltage control gate is formed of a stack of the buried well implant and the surface well implant within the DTI trench. Optionally, a poly layer formed of a bipolar process base poly layer is disposed on the floating gate. Optionally, a shallow well isolation region is formed on the substrate, a floating gate is disposed on the shallow well region, and an overlaying control gate, formed of a bipolar process base poly, is disposed above the floating gate.
REFERENCES:
patent: 5198691 (1993-03-01), Tarng
patent: 5872378 (1999-02-01), Rose et al.
patent: 5953600 (1999-09-01), Gris
patent: 5969992 (1999-10-01), Mehta et al.
patent: 6028789 (2000-02-01), Mehta et al.
patent: 6066521 (2000-05-01), Yokoyama et al.
patent: 6875648 (2005-04-01), Chaudhry
patent: 7508027 (2009-03-01), Oberhuber et al.
patent: 7593261 (2009-09-01), Park et al.
patent: 7746696 (2010-06-01), Paak
patent: 7821054 (2010-10-01), Watanabe
patent: 7868372 (2011-01-01), Chen et al.
patent: 2005/0074935 (2005-04-01), Hsu
patent: 2005/0179111 (2005-08-01), Chao
patent: 2007/0064488 (2007-03-01), Tanaka
patent: 2007/0235816 (2007-10-01), Moore
patent: 2007/0241387 (2007-10-01), Onoda
patent: 0 529 860 (1993-03-01), None
patent: 2007-194266 (2007-08-01), None
patent: 2006/127200 (2006-11-01), None
PCT/IB2009/055304 International Search Report, Mar. 2, 2010.
Letavic Theodore James
Mandhare Charudatta
Noort Wibo Van
Zaato Francis
Budd Paul A
Jackson, Jr. Jerome
NXP B.V.
LandOfFree
BiCMOS integration of multiple-times-programmable... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with BiCMOS integration of multiple-times-programmable..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and BiCMOS integration of multiple-times-programmable... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2794874