BiCMOS devices

Details BiCMOS devices BiCMOS devices

1992-07-20

1999-01-05

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257378, 257401, 257328, H01L 2702, H01L 2968, H01L 2972

Patent

active

058566953

ABSTRACT:
A BiCMOS process which provides both low voltage (digital) and high voltage (analog) CMOS devices. The high voltage NMOS devices have a compensated drain formed by the NPN and PNP base implants. The PNP base plus the high voltage NMOS drain carrier concentrations are both optimized by adjustment of the two variables N base implant dose and P base implant dose; this determines the NPN base carrier concentration which turns out to provide good NPN characteristics. Low voltage NMOS source and drain implants employ a higher dose and may also be used for the high voltage NMOS source. The NPN emitter doping may also be used for a contact to the high voltage NMOS drain contact.

REFERENCES:
patent: 5119162 (1992-06-01), Todd et al.
patent: 5148255 (1992-09-01), Nakazato et al.
patent: 5169794 (1992-12-01), Iranmanesh
patent: 5216217 (1993-06-01), Takagi et al.

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