Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-08-20
1995-11-14
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257370, H01L 2702
Patent
active
054669600
ABSTRACT:
A well tap for a field effect device formed using a single polysilicon process and a silicide layer is provided. The polysilicon layer which makes contact to the well is doped the same way as the well but is doped opposite of the source or drain. The silicide layer is formed on the upper and sidewall surfaces of the source or drain, well tap, and gate contacts for a field effect device. The silicide layer extends from the sidewall silicide across the upper surface of the transistors and up to the sidewall oxide of the transistor gates. The structure makes it possible to eliminate laterally-spaced separate well taps used in previous devices. Elimination of the laterally-spaced well taps permits higher packing density, and lowers buried layer-to-substrate capacitance.
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Ilderem Vida
Leibiger Steven M.
Carroll J.
Hughes Richard L.
National Semiconductor Corporation
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