BiCMOS device having an SOI substrate and process for making the

Details BiCMOS device having an SOI substrate and process for making the BiCMOS device having an SOI substrate and process for making the

1990-08-13

1993-05-18

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257354, 257369, 257506, H01L 2712

Patent

active

052123979

ABSTRACT:
A BiCMOS device and process are disclosed wherein the transistors components are fabricated on an SOI substrate. A SIMOX process is used to form a buried oxide layer in a single crystal silicon substrate followed by an epitaxial deposition to form a silicon body of varying thickness overlying the buried oxide layer. MOS transistors are then formed in a thin portion of the epitaxial layer and a vertical bipolar transistor is formed in the thick portion of the epitaxial layer. In accordance with one embodiment of the invention, a single crystal semiconductor substrate is provided having a principal surface and a buried oxide layer underlying the first surface. A lightly doped epitaxial layer of a first conductivity type having a thin MOS region and a thick bipolar region overlies the principal surface. A first and second isolation regions extending from the first surface to the buried oxide layer separate and electrically insulate the bipolar region from the MOS region. An NMOS and a PMOS transistor are formed in the thin MOS region and are separated by a third isolation region extending from the first surface to the buried oxide layer. A vertical bipolar is formed in the electrically insulated bipolar region of the epitaxial layer.

REFERENCES:
patent: 4931407 (1990-06-01), Maeda et al.
patent: 4951102 (1990-08-01), Beitman et al.

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