Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-04-28
1996-11-26
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257370, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
055788564
ABSTRACT:
The present invention includes a BiMOS device having an MOS transistor that triggers a bipolar transistor, wherein the base and channel region are formed within a well region that electrically floats. The present invention also includes a BiMOS device having separate regions for the collector and drain regions and for the base and channel regions. The present invention further includes processes for forming the BiMOS devices. The BiMOS device may include a floating well region. The BiMOS device may include both low voltage MOS logic transistors and a high voltage or high power bipolar transistor. A low voltage or low power bipolar transistor may also be used. Separate drain, collector, base, and channel regions allow the bipolar transistor performance to be optimized independently of the MOS transistor, which may have its performance independently optimized, too. A plurality of MOS logic transistors, such as an AND or an OR gate may be used in the BiMOS device.
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Kirsch Howard C.
Subrahmanyan Ravi
Meier Stephen
Meyer George R.
Motorola Inc.
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