Biasing non-volatile storage based on selected word line

Details Biasing non-volatile storage based on selected word line Biasing non-volatile storage based on selected word line

2006-12-30

2008-12-23

Lam, David (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220, C365S185210, C365S185170

Reexamination Certificate

active

07468919

ABSTRACT:
A body bias is applied to a non-volatile storage system to compensate for performance variations which are based on the position of a selected word line which is associated with non-volatile storage elements undergoing program, read or verify operations. In one approach, the body bias increases when the selected word line is closer to a drain side of a NAND string than a source side. In another approach, the body bias varies when the selected word line is an end word line. In another approach, first or second body bias levels can be used when the selected word line is in a first or second group of word lines, respectively. The body bias reduces variations in threshold voltage levels and threshold voltage distributions which are based on the selected word line position. Gate-induced drain leakage (GIDL) is also reduced.

REFERENCES:
patent: 5386422 (1995-01-01), Endoh
patent: 5467306 (1995-11-01), Kaya
patent: 5522580 (1996-06-01), Varner, Jr.
patent: 5570315 (1996-10-01), Tanaka
patent: 5774397 (1998-06-01), Endoh
patent: 6046935 (2000-04-01), Takeuchi
patent: 6175522 (2001-01-01), Fang
patent: 6218895 (2001-04-01), De
patent: 6222762 (2001-04-01), Guterman
patent: 6272666 (2001-08-01), Borkar
patent: 6301155 (2001-10-01), Fujiwara
patent: 6363016 (2002-03-01), Lin
patent: 6366499 (2002-04-01), Wang
patent: 6456528 (2002-09-01), Chen
patent: 6484265 (2002-11-01), Borkar
patent: 6522580 (2003-02-01), Chen
patent: 6560152 (2003-05-01), Cernea
patent: 6577530 (2003-06-01), Muranaka
patent: 6734490 (2004-05-01), Esseni
patent: 6751125 (2004-06-01), Prinz
patent: 6771536 (2004-08-01), Li
patent: 6839281 (2005-01-01), Chen
patent: 6859397 (2005-02-01), Lutze
patent: 6870213 (2005-03-01), Cai
patent: 6900650 (2005-05-01), Sheng
patent: 6917237 (2005-07-01), Tschanz
patent: 6957163 (2005-10-01), Ando
patent: 7009881 (2006-03-01), Noguchi
patent: 7046568 (2006-05-01), Cernea
patent: 7057958 (2006-06-01), So
patent: 7116588 (2006-10-01), Joo
patent: 6801454 (2006-12-01), Wang
patent: 7170785 (2007-01-01), Yeh
patent: 7196928 (2007-03-01), Chen
patent: 7292476 (2007-11-01), Goda
patent: 7345913 (2008-03-01), Isobe
patent: 7394708 (2008-07-01), Vadi
patent: 2002/0140496 (2002-10-01), Keshavarzi
patent: 2004/0057287 (2004-03-01), Cernea
patent: 2004/0109357 (2004-06-01), Cernea
patent: 2004/0255090 (2004-12-01), Guterman
patent: 2005/0024939 (2005-02-01), Chen
patent: 2005/0052219 (2005-03-01), Butler
patent: 2005/0111260 (2005-05-01), Nazarian
patent: 2005/0192773 (2005-09-01), Sheng
patent: 2006/0126390 (2006-06-01), Gorobets
patent: 2006/0133172 (2006-06-01), Schnabel
patent: 2006/0140007 (2006-06-01), Cernea
patent: 2006/0158947 (2006-07-01), Chan
patent: 2006/0226889 (2006-10-01), Gupta
patent: 2006/0227613 (2006-10-01), Joo
patent: 2007/0008779 (2007-01-01), Isobe
N. Shibata et al., A 70nm 16Gb 16-level-cell NAND Flash Memory, 2007 Symp. on VLSI Circuits Digest of Technical Papers, pp. 190-191, Jun. 14-16, 2007.
Y. Zhang et al., An Intergrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory, 2007 Symp. on VLSI Circuits of Technical Papers, pp. 98-99, Jun. 14-16, 2007.
D.H. Kang et al., Novel Heat Dissipating Cell Scheme For Improving A Reset Distribution In A 512M Phase-Change Random Access Memory (PRAM), 2007 Symp. on VLSI Circuits Digest of Technical Papers, pp. 96-97, Jun. 14-16, 2007.
H. Tanaka et al., Bit Cost Scalable Technology With Punch And Plug Process For Ultra High Density Flash Memory, 2007 Symp. on VLSI Circuits Digest of Technical Papers, pp. 14-15, Jun. 14-16, 2007.
U.S. Appl. No. 11/618,790, filed Dec. 30, 2006.
Office Action dated Jul. 22, 2008, U.S. Appl. No. 11/681,782, filed Dec. 30, 2006.
Office Action dated Jun. 24, 2008, U.S. Appl. No. 11/681,786, filed Dec. 30, 2006.
Office Action dated Jun. 9, 2008, U.S. Appl. No. 11/618,790, filed Dec 30, 2006.
Office Action dated Jul. 25, 2008, U.S. Appl. No. 11/618,791, filed Dec. 30, 2006.
Office Action dated Jul. 23, 2008, U.S. Appl. No. 11/618,793, filed Dec. 30, 2006.

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