Biasing a phase change memory device

Details Biasing a phase change memory device Biasing a phase change memory device

2007-06-01

2010-12-07

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S158000, C257S002000, C257S005000, C257S052000

Reexamination Certificate

active

07848138

ABSTRACT:
A phase change memory device includes a plurality of cells connected to bitlines and including respective phase change memory elements and cell select devices and an addressing circuit for selectively addressing at least one bitline and one cell connected thereto. A reading column bias circuit supplies a bitline voltage to the addressed bitline and cell. The bitline voltage includes the sum of a safe voltage and a reference select device voltage, wherein the reference voltage is equal to a select device voltage on the select device when a cell current flowing through the phase change memory element and the cell select device is equal to a safe current. The safe voltage and the safe current are such that phase transition of the phase change memory element is prevented in any bias condition including a cell voltage lower than the safe voltage and in any bias condition including the cell current lower than the safe current.

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Kinam Kim and Su Jin Ahn, “Reliability Investigations for Manufacturable High Density PRAM”, IEEE 43rd Annual International Reliability Physics Symposium, pp. 157-162, Apr. 17-21, 2005.

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