Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-05-27
2008-05-27
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S787000, C438S788000, C427S533000, C204S192120, C204S192150
Reexamination Certificate
active
07378356
ABSTRACT:
A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated processes performed on a reactor according to the present inention.
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Demaray Richard E.
Mullapudi Ravi B.
Narasimhan Mukundan
Zhang Hongmei
Estrada Michelle
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
SpringWorks LLC
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